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Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.12008/23859 How to cite
Title: Variability-aware design method for a constant inversion level bias current generator
Authors: Antúnez, Guillermo
Siniscalchi, Mariana
Silveira, Fernando
Rossi, Conrado
Type: Preprint
Keywords: Dispersion, Semiconductor device modeling, Generators, MOSFET, Design methodology, Integrated circuit modeling, Current references, MOS transistors, Mismatch, ACM, Temperature effects, Constant inversion
Issue Date: 2019
Abstract: A model for estimating the dispersion in the output of a MOS-only, constant inversion level, current reference is presented. Based on such model, a design method is introduced that allows to optimize how area is spent in order to minimize the dispersion for a given layout complexity. The model was successfully compared with the measurements of a current source fabricated on a 130-nm CMOS technology and with the simulations of six other designs. The fabricated, ultralow power, current source has an area of 0.032 mm 2 and produces 11.4 nA on average, while all eight measured devices were inside ±2.1% of the average.
Description: Publicado en IEEE Transactions on Circuits and Systems I : Regular Papers , Volume 66, Number 6, page 2027--2036- Jun. 2019
Citation: Antúnez, G., Siniscalchi, M., Silveira, F. y otros.Variability-aware design method for a constant inversion level bias current generator [Preprint]. Publicado en: IEEE Transactions on Circuits and Systems I : Regular Papers, Vol.66, Num.6, Jun. 2019. DOI: 10.1109/TCSI.2019.2897090
Academic department: Electrónica
Investigation group: Microelectrónica
License: Licencia Creative Commons Atribución - No Comercial - Sin Derivadas (CC - By-NC-ND 4.0)
Appears in Collections:Publicaciones académicas y científicas - Instituto de Ingeniería Eléctrica

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