Dynamic model of a six-transistor Schmitt trigger in weak inversion

Abstract

This paper presents a dynamic model for the sixtransistor Schmitt trigger in the weak inversion region. It captures key parameters—capacitances, transition frequency, hysteresis thresholds, output current, and time constants—with good agreement to circuit-level simulations. Complementing existing models, it provides fast and reliable estimates for transistor sizing and reduces the need for extensive simulations, offering a practical tool for the design and analysis of ultra-low-voltage circuits.