Por favor, use este identificador para citar o enlazar este ítem:
https://hdl.handle.net/20.500.12008/46998
Cómo citar
| Título: | Consistent noise models for analysis and design of CMOS circuits |
| Autor: | Arnaud, Alfredo Galup Montoro, Carlos |
| Tipo: | Postprint |
| Palabras clave: | Circuit noise, Semiconductor device modeling, 1f noise, Low-frequency noise, MOSFET circuits |
| Fecha de publicación: | 2004 |
| Resumen: | Simple, physics-based MOSFET noise models, valid over the linear, saturation, and subthreshold operation regions are presented. The consistency of the models representing series parallel associations of transistors is verified. Simple formulas for hand analysis using the inversion level concept are developed. The proportionality between the flicker noise corner frequency and the transistor transition frequency is proved and experimentally verified under wide bias conditions. Application of the noise models to a low-noise design is shown. Index Terms compact modeling, low-noise design, MOSFET, noise. |
| Editorial: | IEEE |
| EN: | IEEE Transactions on Circuits and Systems, 2004, v. 51, no. 10 |
| Citación: | Arnaud, A, Galup-Montoro, C. "Consistent noise models for analysis and design of CMOS circuits" IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 51, no. 10, 2004, doi: 10.1109/TCSI.2004.835028 |
| Departamento académico: | Electrónica |
| Grupo de investigación: | Microelectrónica |
| Aparece en las colecciones: | Publicaciones académicas y científicas - Instituto de Ingeniería Eléctrica |
Ficheros en este ítem:
| Fichero | Descripción | Tamaño | Formato | ||
|---|---|---|---|---|---|
| AG04.pdf | 1,81 MB | Adobe PDF | Visualizar/Abrir |
Este ítem está sujeto a una licencia Creative Commons Licencia Creative Commons
