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Título: | A MOSFET-only voltage source with arbitrary sign adjustable temperature coefficient |
Autor: | Rossi, Conrado Oreggioni, Julián Silveira, Fernando Dualibe, Carlos |
Tipo: | Ponencia |
Descriptores: | Electrónica |
Fecha de publicación: | 2011 |
Resumen: | A MOS-diode biased by a constant inversion level current source is a simple MOSFET-only circuit that implements a voltage source with a linear temperature dependence. Through adjustment of the inversion level, the temperature slope may be changed from negative to positive, including the constant voltage condition. A test circuit, fabricated on a 0.35 μm CMOS technology, was measured from 300K to 375 K while sweeping the inversion coefficient from 0.06 to 180. The theoretical model agrees with the measured data, accurately predicting the temperature slope. The presented all-region continuous model is especially useful at and near zero temperature slope operation. |
Descripción: | Trabajo presentado al 2011 IEEE 9th International New Circuits and systems conference, Bordeaux, France, 2011. |
Citación: | Rossi-Aicardi, C. Oreggioni, J, Silveira, F. y Dualibe, C. "A MOSFET-only voltage source with arbitrary sign adjustable temperature coefficient," Proceedings of the 2011 IEEE 9th International New Circuits and systems conference, Bordeaux, France, 2011, pp. 366-369, doi: 10.1109/NEWCAS.2011.5981246. |
Departamento académico: | Electrónica |
Grupo de investigación: | Microelectrónica |
Aparece en las colecciones: | Publicaciones académicas y científicas - Instituto de Ingeniería Eléctrica |
Ficheros en este ítem:
Fichero | Descripción | Tamaño | Formato | ||
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ROSD11.pdf | 874,51 kB | Adobe PDF | Visualizar/Abrir |
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