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Título: | MOST Moderate–weak-inversion region as the optimum design zone for CMOS 2.4-GHz CS-LNAs |
Autor: | Fiorelli, Rafaella Silveira, Fernando Peralías, Eduardo |
Tipo: | Preprint |
Palabras clave: | Common-source low-noise amplifiers (CS-LNAs), Design methodology, Low power, Moderate inversion (MI), Optimization, Pareto optimal, Weak-inversion (WI) noise figure (NF) |
Descriptores: | Electrónica |
Fecha de publicación: | 2014 |
Resumen: | In this paper, the MOS transistor (MOST) moderate-inversion (MI)-weak-inversion (WI) region is shown to be the optimum design zone for CMOS 2.4-GHz common-source low-noise amplifiers (CS-LNAs) focused on low power consumption applications. This statement is supported by a systematic study where the MOST is analyzed in all-inversion regions using an exhaustive CS-LNA noise-figure (NF)-power-consumption optimization technique with power gain constraint. Effects of bias choke resistance and MOST capacitances are carefully included in the study to obtain more accurate results, especially for the MI-WI region. NF, power consumption, and gain versus the inversion region are described with design space maps, providing the designer with a deep insight of their tradeoffs. The Pareto-optimal design frontier obtained by calculation-showing the MI-WI region as the optimum design zone-is reverified by extensive electrical simulations of a high number of designs. Finally, one 90-nm 2.4-GHz CS-LNA Pareto optimal design is implemented. It achieves the best figure of merit considering under-milliwatt CS-LNAs published designs, consuming 684 µW, an NF of 4.36 dB, a power gain of 9.7 dB, and a third-order intermodulation intercept point of -4 dBm with load and source resistances of 50ohm. |
Descripción: | Artículo publicado en IEEE Transactions on Microwave Theory and Techniques, 2014, v. 62, no. 3 |
Citación: | Fiorelli, R, Silveira, F, Peralías, E. "MOST Moderate–Weak-Inversion Region as the Optimum Design Zone for CMOS 2.4-GHz CS-LNAs," [Preprint] Publicado en: IEEE Transactions on Microwave Theory and Techniques, 2014, v. 62, no. 3, pp. 556-566, doi: 10.1109/TMTT.2014.2303476 |
Departamento académico: | Electrónica |
Grupo de investigación: | Microelectrónica |
Aparece en las colecciones: | Publicaciones académicas y científicas - Instituto de Ingeniería Eléctrica |
Ficheros en este ítem:
Fichero | Descripción | Tamaño | Formato | ||
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FSP14.pdf | 3,03 MB | Adobe PDF | Visualizar/Abrir |
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