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Título: | Characterization of MOS Transistor Current Mismatch |
Autor: | Klimach, H Arnaud, Alfredo Schneider, M. C Galup Montoro, Carlos |
Tipo: | Artículo |
Palabras clave: | MOSFET, Analog design, Matching, Mismatch, Compact models |
Fecha de publicación: | 2004 |
Resumen: | Electron device matching has been a key factor on the performance of today’s analog or even digital electronic circuits. This paper presents a study of drain current matching in MOS transistors. CMOS test structures were designed and fabricated as a way to develop an extensive experimental work, where current mismatch was measured under a wide range of bias conditions. A model for MOS transistor mismatch was also developed, using the carrier number fluctuation theory to account for the effects of local doping fluctuations. This model shows a good fitting with measurements over a wide range of operation conditions, from weak to strong inversion, from linear to saturation region, and allows the assessment of mismatch from process and geometric parameters. |
Editorial: | ACM |
Citación: | Klimach, H., Arnaud, A., Schneider, M. C., Galup Montoro, C. Characterization of MOS Transistor Current Mismatch. SBCCI 2004. 17th Symposium on Integrated Circuits and Systems Design, Porto de Galinhas, Brasil, 2004 |
Aparece en las colecciones: | Publicaciones académicas y científicas - Instituto de Ingeniería Eléctrica |
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