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| Título: | Simple noise formulas for MOS analog design |
| Autor: | Arnaud, Alfredo Galup Montoro, Carlos |
| Tipo: | Preprint |
| Palabras clave: | MOSFET, Thermal noise, Flicker noise, Semiconductor device models, Semiconductor device noise |
| Descriptores: | ELECTRÓNICA |
| Fecha de publicación: | 2003 |
| Resumen: | The designer needs simple and accurate models to estimate noise in MOS transistors as a function of their size, bias point and technology. In this work, we present a simple, continuous, physics-based model for flicker noise. We review also thermal noise and we examine the behavior of the corner frequency (f/sub c/) in terms of the bias point. The expressions that are presented are simple and valid in all the operating regions, from weak to strong inversion, constituting a useful set of equations for low noise analog design. Finally we examine the design of two low noise circuit elements, fabricated in a 0.8/spl mu/m technology. |
| Citación: | Arnaud, A., Galup Montoro, C. Simple noise formulas for MOS analog design [Preprint] Publicado en Proceedings of the International Symposium on Circuits and Systems, 2003. ISCAS '03. doi 10.1109/ISCAS.2003.1205532 |
| Departamento académico: | Electrónica |
| Grupo de investigación: | Microelectrónica |
| Licencia: | Licencia Creative Commons Atribución – No Comercial – Sin Derivadas (CC - By-NC-ND) |
| Aparece en las colecciones: | Publicaciones académicas y científicas - Instituto de Ingeniería Eléctrica |
Ficheros en este ítem:
| Fichero | Descripción | Tamaño | Formato | ||
|---|---|---|---|---|---|
| AG03b.pdf | 254,92 kB | Adobe PDF | Visualizar/Abrir |
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