Título:
Perspectives of TFETs for low power analog Ics
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Autor:
Sensale Rodríguez, Berardi
Fu, Y
Barboni, Leonardo
Silveira, Fernando
Fay, P
Jena, D
Seabaugh, A
Xing, H. G
Fu, Y
Barboni, Leonardo
Silveira, Fernando
Fay, P
Jena, D
Seabaugh, A
Xing, H. G
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Tipo de documento:
Ponencia
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Palabras clave:
TFET
Low-power electronics
Analog circuits
Sub-threshold
Design space exploration
Graphene
Low-power electronics
Analog circuits
Sub-threshold
Design space exploration
Graphene
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Año de publicación:
2012
Contenido:
Resumen:
In this paper we show that tunnel field effect transistors (TFETs) biased in the subthreshold region promise several advantages for low-power/high-frequency analog IC applications (e.g. GHz operation with sub-0.1 mW power consumption). Analytical and TCAD models for graphene nano-ribbon (GNR) and InAs/GaSb nanowire TFETs are employed, respectively, for the first time in subthreshold analog circuit examples using the g m /I d integrated circuit (IC) design technique. From comparison of these TFET technologies with traditional FETs it is observed that due to the higher currents per unit gate width at low voltage for TFETs, smaller, higher speed, and lower power analog circuits are enabled.
Descripción:
Trabajo presentado al IEEE Subthreshold Microelectronics Conference (SubVT), 2012
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Citación:
Senale Rodríguez, B. Fu, Y, Barboni, L y otros. "Perspectives of TFETs for low power analog ICs" Publicado en: Proceedings of the IEEE Subthreshold Microelectronics Conference (SubVT), Waltham, MA, USA, 9-10 oct., 2012, pp. 1-3, doi: 10.1109/SubVT.2012.6404307
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Departamento académico:
Electrónica
Grupo de investigación:
Microelectrónica
Licencia:
Licencia Creative Commons Atribución - No Comercial - Sin Derivadas (CC - By-NC-ND 4.0)
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| Ficheros | Descripción | Tamaño | Formato | ||
|---|---|---|---|---|---|
| senale2012.pdf | — | 625.32 KB | Adobe PDF |