Título:
TFET-Based Circuit Design Using the Transconductance Generation Efficiency gm/Id Method
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Autor:
Barboni, Leonardo
Siniscalchi, Mariana
Sensale Rodríguez, Berardi
Siniscalchi, Mariana
Sensale Rodríguez, Berardi
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Artículo
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Palabras clave:
Si-FinFETs
Tunnel field effect transistors (TFET)
Ultra-low power design
gm/Id method
One-stage common-source amplifier
Two-stage operational transconductance amplifier (OTA) with Miller effect compensation
Tunnel field effect transistors (TFET)
Ultra-low power design
gm/Id method
One-stage common-source amplifier
Two-stage operational transconductance amplifier (OTA) with Miller effect compensation
Descriptores:
Electrónica
Año de publicación:
2015
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Resumen:
Tunnel field effect transistors (TFETs) have emerged as one of the most promising post-CMOS transistor technologies. In this paper, we: 1) review the perspectives of such devices for low-power high-frequency analog integrated circuit applications (e.g., GHz operation with sub-0.1 mW power consumption), 2) discuss and employ a compact TFET device model in the context of the gm/Id integrated analog circuit design methodology, and 3) compare several proposed TFET technologies for such applications. The advantages of TFETs arise since these devices can operate in the sub-threshold region with larger transconductance-to-current ratio than traditional FETs, which is due to the current turn-on mechanism being interband tunneling rather than thermionic emission. Starting from technology computer-aided design and/or analytical models for Si-FinFETs, graphene nano-ribbon (GNR) TFETs and InAs/GaSb TFETs at the 15-nm gate-length node, as well as InAs double-gate TFETs at the 20-nm gate-length node, we conclude that GNR TFETs might promise larger bandwidths at low-voltage drives due to their high current densities in the sub-threshold region. Based on this analysis and on theoretically predicted properties, GNR TFETs are identified as one of the most attractive field effect transistor technologies proposed-to-date for ultra-low power analog applications.
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IEEE
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Citación:
Barboni, L, Siniscalchi, M, Sensale-Rodriguez, B. "TFET-Based Circuit Design Using the Transconductance Generation Efficiency gm/Id Method," IEEE Journal of the Electron Devices Society, vol. 3, no. 3, pp. 208-216, 2015, doi: 10.1109/JEDS.2015.2412118
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Departamento académico:
Electrónica
Grupo de investigación:
Microelectrónica
Licencia:
Licencia Creative Commons Atribución (CC - By 4.0)
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| Ficheros | Descripción | Tamaño | Formato | ||
|---|---|---|---|---|---|
| BSS15.pdf | — | 1.06 MB | Adobe PDF |