Título:
Fully-Depleted SOI CMOS Technology for Low-Voltage Low-Power Mixed Digital/Analog/Microwave Circuits
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Autor:
Flandre, Denis
Colinge, J. P
Chen, J
De Ceuster, D
Eggermont, J. P
Ferreira, L
Gentinne, B
Jespers, Paul
Viviani, A
Gillon, R
Raskin, J. P
Vander Vorst, A
Valiente, Gabriel
Silveira, Fernando
Colinge, J. P
Chen, J
De Ceuster, D
Eggermont, J. P
Ferreira, L
Gentinne, B
Jespers, Paul
Viviani, A
Gillon, R
Raskin, J. P
Vander Vorst, A
Valiente, Gabriel
Silveira, Fernando
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Tipo de documento:
Artículo
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Descriptores:
ELECTRÓNICA
Año de publicación:
1999
Contenido:
Resumen:
This paper demonstrates that fully-depleted (FD) silicon-on-insulator (SOI) technology offers unique opportunities in the field of low-voltage, low-power CMOS circuits. Beside the well-known reduction of parasitic capacitances due to dielectric isolation, FD SOI MOSFETs indeed exhibit near-ideal body factor, subthreshold slope and current drive. These assets are both theoretically and experimentally investigated. Original circuit studies then show how a basic FD SOI CMOS process allows for the mixed fabrication and operation under low supply voltage of analog, digital and microwave components with properties significantly superior to those obtained on bulk CMOS. Experimental circuit realizations support the analysis.
Descripción:
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Editorial:
Kluwer
EN:
Analog Integrated Circuits and Signal Processing, 1999, v. 21
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Citación:
Flandre, Denis, Colinge, J. P., Chen, J., De Ceuster, D., Eggermont, J. P., Ferreira, L., Gentinne, B., Jespers, Paul, Viviani, A., Gillon, R., Raskin, J. P., Vander Vorst, A., Valiente, Gabriel, Silveira, Fernando. Fully-Depleted SOI CMOS Technology for Low-Voltage Low-Power Mixed Digital/Analog/Microwave Circuits [en línea] Analog Integrated Circuits and Signal Processing, 1999, v. 21
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Departamento académico:
Electrónica
Electrónica
Electrónica
Grupo de investigación:
Electrónica Aplicada
Microelectrónica
Microelectrónica
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