Título:
Consistent noise models for analysis and design of CMOS circuits
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Compilador:
Autor:
Arnaud, Alfredo
Galup Montoro, Carlos
Galup Montoro, Carlos
Tutor:
Tipo de documento:
Postprint
Editor:
Palabras clave:
Circuit noise
Semiconductor device modeling
1f noise
Low-frequency noise
MOSFET circuits
Semiconductor device modeling
1f noise
Low-frequency noise
MOSFET circuits
Descriptores:
Año de publicación:
2004
Contenido:
Resumen:
Simple, physics-based MOSFET noise models, valid over the linear, saturation, and subthreshold operation regions are presented. The consistency of the models representing series parallel associations of transistors is verified. Simple formulas for hand analysis using the inversion level concept are developed. The proportionality between the flicker noise corner frequency and the transistor transition frequency is proved and experimentally verified under wide bias conditions. Application of the noise models to a low-noise design is shown. Index Terms compact modeling, low-noise design, MOSFET, noise.
Descripción:
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Editorial:
IEEE
EN:
IEEE Transactions on Circuits and Systems, 2004, v. 51, no. 10
Financiadores:
Citación:
Arnaud, A, Galup-Montoro, C. "Consistent noise models for analysis and design of CMOS circuits" IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 51, no. 10, 2004, doi: 10.1109/TCSI.2004.835028
Citación:
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Departamento académico:
Electrónica
Grupo de investigación:
Microelectrónica
Licencia:
Licencia Creative Commons Atribución - No Comercial - Sin Derivadas (CC - By-NC-ND 4.0)
Colecciones:
| Ficheros | Descripción | Tamaño | Formato | ||
|---|---|---|---|---|---|
| AG04.pdf | — | 1.76 MB | Adobe PDF |