Por favor, use este identificador para citar o enlazar este ítem: https://hdl.handle.net/20.500.12008/23861

Título:

Variability-aware design method for a constant inversion level bias current generator

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Autor:

Antúnez, Guillermo
Siniscalchi, Mariana
Silveira, Fernando
Rossi, Conrado

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Tipo de documento:

Preprint

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Palabras clave:

Dispersion
Semiconductor device modeling
Generators
MOSFET
Design methodology
Integrated circuit modeling
Current references
MOS transistors
Mismatch
ACM
Temperature effects
Constant inversion

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Año de publicación:

2019

Contenido:

Resumen:

A model for estimating the dispersion in the output of a MOS-only, constant inversion level, current reference is presented. Based on such model, a design method is introduced that allows to optimize how area is spent in order to minimize the dispersion for a given layout complexity. The model was successfully compared with the measurements of a current source fabricated on a 130-nm CMOS technology and with the simulations of six other designs. The fabricated, ultralow power, current source has an area of 0.032 mm 2 and produces 11.4 nA on average, while all eight measured devices were inside ±2.1% of the average.

Descripción:

Publicado en IEEE Transactions on Circuits and Systems I : Regular Papers , Volume 66, Number 6, page 2027--2036- Jun. 2019

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Citación:

Antúnez, G., Siniscalchi, M., Silveira, F. y otros.Variability-aware design method for a constant inversion level bias current generator [Preprint]. Publicado en: IEEE Transactions on Circuits and Systems I : Regular Papers, Vol.66, Num.6, Jun. 2019. DOI: 10.1109/TCSI.2019.2897090

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Departamento académico:

Electrónica

Grupo de investigación:

Microelectrónica

Licencia:

Licencia Creative Commons Atribución - No Comercial - Sin Derivadas (CC - By-NC-ND 4.0)
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ASSR19.pdf Preprint 888.55 KB Adobe PDF