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Título:

MOST Moderate–weak-inversion region as the optimum design zone for CMOS 2.4-GHz CS-LNAs

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Autor:

Fiorelli, Rafaella
Silveira, Fernando
Peralías, Eduardo

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Tipo de documento:

Preprint

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Palabras clave:

Common-source low-noise amplifiers (CS-LNAs)
Design methodology
Low power
Moderate inversion (MI)
Optimization
Pareto optimal
Weak-inversion (WI) noise figure (NF)

Descriptores:

Electrónica

Año de publicación:

2014

Contenido:

Resumen:

In this paper, the MOS transistor (MOST) moderate-inversion (MI)-weak-inversion (WI) region is shown to be the optimum design zone for CMOS 2.4-GHz common-source low-noise amplifiers (CS-LNAs) focused on low power consumption applications. This statement is supported by a systematic study where the MOST is analyzed in all-inversion regions using an exhaustive CS-LNA noise-figure (NF)-power-consumption optimization technique with power gain constraint. Effects of bias choke resistance and MOST capacitances are carefully included in the study to obtain more accurate results, especially for the MI-WI region. NF, power consumption, and gain versus the inversion region are described with design space maps, providing the designer with a deep insight of their tradeoffs. The Pareto-optimal design frontier obtained by calculation-showing the MI-WI region as the optimum design zone-is reverified by extensive electrical simulations of a high number of designs. Finally, one 90-nm 2.4-GHz CS-LNA Pareto optimal design is implemented. It achieves the best figure of merit considering under-milliwatt CS-LNAs published designs, consuming 684 µW, an NF of 4.36 dB, a power gain of 9.7 dB, and a third-order intermodulation intercept point of -4 dBm with load and source resistances of 50ohm.

Descripción:

Artículo publicado en IEEE Transactions on Microwave Theory and Techniques, 2014, v. 62, no. 3

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Citación:

Fiorelli, R, Silveira, F, Peralías, E. "MOST Moderate–Weak-Inversion Region as the Optimum Design Zone for CMOS 2.4-GHz CS-LNAs," [Preprint] Publicado en: IEEE Transactions on Microwave Theory and Techniques, 2014, v. 62, no. 3, pp. 556-566, doi: 10.1109/TMTT.2014.2303476

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Departamento académico:

Electrónica

Grupo de investigación:

Microelectrónica

Licencia:

Licencia Creative Commons Atribución - No Comercial - Sin Derivadas (CC - By-NC-ND 4.0)
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