Por favor, use este identificador para citar o enlazar este ítem: https://hdl.handle.net/20.500.12008/21238

Título:

Simple noise formulas for MOS analog design

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Autor:

Arnaud, Alfredo
Galup Montoro, Carlos

Tutor:

Tipo de documento:

Preprint

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Palabras clave:

MOSFET
Thermal noise
Flicker noise
Semiconductor device models
Semiconductor device noise

Descriptores:

ELECTRÓNICA

Año de publicación:

2003

Contenido:

Resumen:

The designer needs simple and accurate models to estimate noise in MOS transistors as a function of their size, bias point and technology. In this work, we present a simple, continuous, physics-based model for flicker noise. We review also thermal noise and we examine the behavior of the corner frequency (f/sub c/) in terms of the bias point. The expressions that are presented are simple and valid in all the operating regions, from weak to strong inversion, constituting a useful set of equations for low noise analog design. Finally we examine the design of two low noise circuit elements, fabricated in a 0.8/spl mu/m technology.

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Citación:

Arnaud, A., Galup Montoro, C. Simple noise formulas for MOS analog design [Preprint] Publicado en Proceedings of the International Symposium on Circuits and Systems, 2003. ISCAS '03. doi 10.1109/ISCAS.2003.1205532

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Departamento académico:

Electrónica

Grupo de investigación:

Microelectrónica

Licencia:

Licencia Creative Commons Atribución – No Comercial – Sin Derivadas (CC - By-NC-ND)
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